15 September 1995 Optimizing the performance of advanced nonvolatile memories using differentiated cell source and drain implants
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Abstract
In order to satisfy the twin requirements of increased performance at low cost, a novel architecture that allows the differentiation of the source and drain implants of an EPROM cell without any additional processing steps has been developed. This cell is more immune to electrical stress than a standard cell during both programming and read cycles. In addition, this cell is inherently electrically shorter and therefore can be used to reduce die size in advanced EPROM devices.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Duncan, P. Pansana, "Optimizing the performance of advanced nonvolatile memories using differentiated cell source and drain implants", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221126; https://doi.org/10.1117/12.221126
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