15 September 1995 Oxide/nitride stacked layers prepared by in situ rapid-thermal multiprocessing
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Abstract
In this paper, the in-situ rapid-thermal multiprocessing has been applied to fabricate high quality ultra thin dielectrics for various ULSI applications. An in-situ low pressure rapid-thermal reoxidation of Si3N4 films in N2O ambient (LRTNO) has been demonstrated to realize high quality ultra thin (< 30 angstrom) ON stacked layers for DRAM applications. While the use of RTN provides a defect-free surface by eliminating interfacial native oxide and forming a very thin thermal nitride layer, the use of low pressure reoxidation suppresses severe oxidation of nitride film and the use of N2O-reoxidation improves the quality of ON stacked layer. The resulting ON stacked layers through in-situ multiprocessing exhibit excellent electrical properties and reliability. A novel ultra thin ONO stacked films have been fabricated by combining the bottom and top N2O-oxide layers with the ultra thin CVD-nitride layers for CMOS logic gate applications. The novel ONO structure is found to have good interfacial characteristics, reduced charge trapping and improved defect density. In addition, an excellent resistance to boron penetration is achieved mainly due to the good diffusion barrier property of the nitride layer. Results also show that the MOSFETs using this ONO structure have comparable initial electrical characteristic as those with control oxides and significantly enhanced hot-carrier immunity than both O2 reoxidized ONO structure and control oxide.
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Hai-Hong Wang, L. K. Han, Jason Yan, Dim-Lee Kwong, "Oxide/nitride stacked layers prepared by in situ rapid-thermal multiprocessing", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221133; https://doi.org/10.1117/12.221133
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