15 September 1995 Submicron patterning of AlSiCu/TiN and AlSiCu/TiW films
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Abstract
As part of our continued studies into improving the performance of multilevel interconnect schemes, we have investigated the film properties and etchability of the AlSiCu/TiN and AlSiCu/TiW film stacks. In this study, two different types of TiN film were deposited by reactive sputtering: low-density (LD) TiN and high-density (HD) TiN. Low-density TiN film was found to have greater oxygen stuffing capability. Both the AlSiCu/TiN and AlSiCu/TiW film stacks can be easily etched anisotropically using high density plasma technology. Barrier integrity of these two film stacks was analyzed by high temperature furnace stress.
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Simon Y. M. Chooi, Fang Hong Gn, Lap Hung Chan, "Submicron patterning of AlSiCu/TiN and AlSiCu/TiW films", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221141; https://doi.org/10.1117/12.221141
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KEYWORDS
Tin

Etching

Metals

Titanium

Oxygen

Aluminum

Resistance

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