Method of multilayer semiconductor structures cross section preparation for transmission electron microscopy

Vladimir Yu. Karasyov; Alexander V. Skornyakov; Mikhail G. Kuznetsov

doi:10.1117/12.221316

19 September 1995 Method of multilayer semiconductor structures cross section preparation for transmission electron microscopy

Vladimir Yu. Karasyov, Alexander V. Skornyakov, Mikhail G. Kuznetsov

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Proceedings Volume 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing; (1995) https://doi.org/10.1117/12.221316
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

The transmission electron microscopy (TEM) and high resolution electron microscopy (HREM) are frequently applied for defects and failures ULCI analysis. The preparation of the electron transparent big area flat- parallel semiconductor thin films is needed. The simple and speed automated method of the thin films (less 10 micrometers ) and cross-sections of the multilayer semiconductor structures and devices preparation is described in this paper. It is based on the mechanical and chem- mechanical grinding and polishing of the semiconductor sample with a free abrasive. This method allows to form the flat-parallel and composition uniform thin films with electron transparent area more that 2 mm² after ion-etching treatment. The original equipment which consists of a local treatment unit, planar treatment unit and wire saw unit is developed.

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Vladimir Yu. Karasyov, Alexander V. Skornyakov, and Mikhail G. Kuznetsov "Method of multilayer semiconductor structures cross section preparation for transmission electron microscopy", Proc. SPIE 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, (19 September 1995); https://doi.org/10.1117/12.221316

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KEYWORDS

Crystals

Transmission electron microscopy

Polishing

Semiconductors

Multilayers

Thin films

Abrasives

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