19 September 1995 On-line exhaust gas analytics during plasma cleaning of PECVD facilities
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Abstract
The etching gases usually applied for plasma supported gas phase cleaning of PECVD facilities, i.e. CF4 SF6 and NF3, were checked for their efficiency with regard to silicon containing layers. Even less known etching gases such as ClF3 or pure fluorine were tested. NF3 has the highest etching rate. The etching rates of F2 and ClF3 are only slightly worse. For the first time, etching gas mixtures of CBrF3/F2 and NF3/F2 were studied. The exhaust gases produced were subjected to online FTIR spectroscopy and evaluated according to their hazards and operator exposure limits. Possible partial recycling of the exhaust gases is discussed.
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Andreas E. Guber, Andreas E. Guber, Uwe Koehler, Uwe Koehler, } "On-line exhaust gas analytics during plasma cleaning of PECVD facilities", Proc. SPIE 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, (19 September 1995); doi: 10.1117/12.221310; https://doi.org/10.1117/12.221310
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