Resistor, silicon dioxide, and nitrite films ion etching process: in-situ monitoring using photoemission testing

A. Kunitzin; Yuri Dekhtyar; Vladimir Noskov

doi:10.1117/12.221304

19 September 1995 Resistor, silicon dioxide, and nitrite films ion etching process: in-situ monitoring using photoemission testing

A. Kunitzin, Yuri Dekhtyar, Vladimir Noskov

Author Affiliations +

Proceedings Volume 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing; (1995) https://doi.org/10.1117/12.221304
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

The photoelectron emission method and the special equipment have been developed to control processes of resistor, silicon dioxide and nitrite thin films. The main idea of the method is based on the difference of work functions of the film and a wafer. It is possible to test structural and phase properties of the films too. The above equipment has been incorporated with the industry instruments providing ion etching.

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A. Kunitzin, Yuri Dekhtyar, and Vladimir Noskov "Resistor, silicon dioxide, and nitrite films ion etching process: in-situ monitoring using photoemission testing", Proc. SPIE 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, (19 September 1995); https://doi.org/10.1117/12.221304

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