Paper
18 September 1995 Advanced optical characterization techniques for borophosphosilicate films
Ronald A. Carpio, Jon Taylor
Author Affiliations +
Abstract
FTIR spectra of borophosphosilicate (BPSG) films which are obtained by metal backed configurations are compared to those obtained by the conventional normal incidence transmission geometry. Sensitivity advantages are demonstrated for both hydrogen incorporation and dopant analyses. P-polarized measurements are explored for preferential excitation of vibrational modes. Reflectance measurements of BPSG films on silicon by FTIR and by the emerging techniques of spectroscopic ellipsometry (SE) both in the UV-visible and mid-IR spectral ranges are reviewed. The use of differential and derivative spectral data anlysis is illustrated for investigating structural and compositional changes which occur from film densification and in the course of film storage.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ronald A. Carpio and Jon Taylor "Advanced optical characterization techniques for borophosphosilicate films", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); https://doi.org/10.1117/12.221205
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KEYWORDS
Semiconducting wafers

FT-IR spectroscopy

Silicon

Metals

Reflectivity

Reflection

Digital signal processing

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