18 September 1995 Advances in infrared spectroscopic methods for epitaxial film characterization
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Abstract
Recent developments in the measurement of epitaxial silicon thin films enable the doping transition width and the substrate carrier concentration to be measured in addition to the film thickness. A model has been developed to simulate the reflectance spectra of lightly-doped epitaxial silicon films deposited on doped silicon substrates in both the mid- and far-infrared spectral regions. Using a model-based approach eliminates the need for instrument calibration and the addition of a bias to the measurement results. Epitaxial films ranging in thickness from 0.1 to 5.0 micrometers were analyzed. Results using a double-side polished silicon wafer as the reference were similar to those using an absolute gold reference. Thickness and doping transition width measurements are consistent with results obtained using other techniques.
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Ronald A. Carpio, Ronald A. Carpio, Burt W. Fowler, Burt W. Fowler, Wolfgang Theiss, Wolfgang Theiss, } "Advances in infrared spectroscopic methods for epitaxial film characterization", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); doi: 10.1117/12.221212; https://doi.org/10.1117/12.221212
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