18 September 1995 Influence of oxygen-iron interaction on the external gettering of Fe in p-Si by polycrystalline silicon film
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Abstract
External gettering of iron by thin polycrystalline silicon film in p-type CA silicon has been investigated using deep level transient spectroscopy, and the surface photovoltage method. Depth profiles of iron concentration indicated a sharp gradient in the Fe concentration near the polycrystalline silicon/substrate interface. Concurrent decrease in the micority carrier diffusion length was also observed in the same region. The majority of iron gettering from the bulk silicon was found to be associated with the enhancement of the internal gettering. The presence of small oxygen precipitates/nuclei generated by prolonged heat treatment in the range of 600C-700C was found to prevent regeneration of FeB pairs at the room temperature. Similarily, carbon in the bulk silicon was found to retard the regeneration of the pairs. On the other hand, large precipitates formed at 1000C do not influence the diffusion or the recombination of Fei with B- to form FeB pairs.
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Kamal K. Mishra, Mark Stinson, John K. Lowell, "Influence of oxygen-iron interaction on the external gettering of Fe in p-Si by polycrystalline silicon film", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); doi: 10.1117/12.221189; https://doi.org/10.1117/12.221189
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