18 September 1995 Optical characterization of surface damage of silicon wafers caused by plasma cleaning
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Abstract
During processing of microelectronic devices, the silicon substrate is typically subjected to a cleaning process in order to prepare its surface for deposition of various layers of thin films. Usually the cleaning process creates a damaged surface layer, which in turn can affect the characteriscs of a deposited film. In particular, plasma cleaning characterization technique that can simultaneously and unambiguously determine the thickness and n and k spectra of the damaged surface layer is described. The technique can be used for sustaining engineering, quality control, and research and development as a means to optimize the surface characteristics of silicon wafers subjected to plasma cleaning.
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A. Rahim Forouhi, A. Rahim Forouhi, Iris Bloomer, Iris Bloomer, } "Optical characterization of surface damage of silicon wafers caused by plasma cleaning", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); doi: 10.1117/12.221197; https://doi.org/10.1117/12.221197
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