18 September 1995 Optical characterization of surface effects from Cu-contaminated SiO2/Si interfaces
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Abstract
The effects of Cu in silicon as a contaminant ion have been studied by many groups. As a result its effect on gate oxide integrity through surface defect decoration and retardation of thermal oxide growth have become recognized problems for both VLSI and ULSI. However its effects on surface charge, interface states, and minority carrier generation with different oxides are not as well-known. The ability to study Cu-induced surface defects directly from surface cleans or etch processing is reduced by the addition of other contaminant species or compromising effects from the additional process steps required to fabricate C-V test capacitators. In this study we address this problem by using a frequency-swept, high injection surface photovoltage method which follows the direct, ex-situ examination of the surface barrier condition and interfacial states affecting generation lifetime. To investigate this problem we have generated a variety of Cu-contaminated samples fabricated by ion implantation and buffered-oxide-etch over three oxide thicknesses and two target Cu surface concentrations. By using a passive optical probe, we present for the first time direct observation of surface state conditions due to the presence of Cu integrating both electrical and chemical phenomena.
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Xiaodong Wang, Xiaodong Wang, Harold G. Parks, Harold G. Parks, Carolyn Cariss, Carolyn Cariss, John K. Lowell, John K. Lowell, } "Optical characterization of surface effects from Cu-contaminated SiO2/Si interfaces", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); doi: 10.1117/12.221202; https://doi.org/10.1117/12.221202
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