18 September 1995 Oxide charging induced by electron exposure in ion implant
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Abstract
The use of electron showers (flood guns) during ion implantation has been used industry-wide to compensate the parasitic effects of electrostatic charging induced by energetic ion beams impinging on the surface during processing. Moreoever for damage protection the wafer may be covered by a protective oxide which inhibits the majority of secondary electrons in the exposure path from reaching the wafer surface. Previous work has shown that the surface barrier of the oxidized surface does not change significantly when flood guns are used which supports this premise. However, in this work we are interested in what effects the electron exposure may have on the oxide potential.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alan Stuber, John K. Lowell, "Oxide charging induced by electron exposure in ion implant", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); doi: 10.1117/12.221195; https://doi.org/10.1117/12.221195
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KEYWORDS
Oxides

Semiconducting wafers

Floods

Ions

Ion implantation

Ion beams

Dielectrics

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