Paper
18 September 1995 Package and module substrate interconnect evaluation by thermal time domain reflectometry (TTDR)
Sugoog Shon, Robert H. Flake, Anthony Wong
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Abstract
A TAB package inner lead interconnect is characterized experimentally by thermal time- domain reflectometry. In order to estimate the low frequency thermal characteristic impedance of the lead in a module substrate, we apply TPA (total pulse area) steady state methodology to analyze transient TTDR measurements. TAB ILB bond thicknesses are measured and compared with estimates of the thermal resistances of short portions of the inner leads terminating at the ILB. The ILB thermal constriction and contact resistance of the bonds measured appear to be negligible compared to the lead resistance.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sugoog Shon, Robert H. Flake, and Anthony Wong "Package and module substrate interconnect evaluation by thermal time domain reflectometry (TTDR)", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); https://doi.org/10.1117/12.221209
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Cited by 1 scholarly publication.
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KEYWORDS
Lead

Resistance

Thermal modeling

Reflectometry

Silicon

Infrared cameras

Cameras

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