18 September 1995 Package and module substrate interconnect evaluation by thermal time domain reflectometry (TTDR)
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Abstract
A TAB package inner lead interconnect is characterized experimentally by thermal time- domain reflectometry. In order to estimate the low frequency thermal characteristic impedance of the lead in a module substrate, we apply TPA (total pulse area) steady state methodology to analyze transient TTDR measurements. TAB ILB bond thicknesses are measured and compared with estimates of the thermal resistances of short portions of the inner leads terminating at the ILB. The ILB thermal constriction and contact resistance of the bonds measured appear to be negligible compared to the lead resistance.
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Sugoog Shon, Robert H. Flake, Anthony Wong, "Package and module substrate interconnect evaluation by thermal time domain reflectometry (TTDR)", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); doi: 10.1117/12.221209; https://doi.org/10.1117/12.221209
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