Etching technology and applications for through-the-wafer silicon etching

David R. Craven; Keven Yu; Tam Pandhumsoporn

doi:10.1117/12.221296

19 September 1995 Etching technology and applications for through-the-wafer silicon etching

David R. Craven, Keven Yu, Tam Pandhumsoporn

Proceedings Volume 2639, Micromachining and Microfabrication Process Technology; (1995) https://doi.org/10.1117/12.221296
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States

Abstract

This presentation reviews aspects relevant to anisotropic very deep plasma etching of silicon. Plasma etching of silicon to depths in excess of 500 (mu) at rates above 4 (mu) /min. allow for new self-releasing or unidirectional flexure structures. It will begin by covering a brief comparison of anisotropic plasma etching with some other alternative very deep etching processes. The impact of Alcatel's product offering ain attaining this etch technology is also reviewed, as well as some of the interdependencies in the etch process. Then the different anisotropic etch regimes will be discussed along with the characteristics and sample applications in each regime.

Citation Download Citation

David R. Craven, Keven Yu, and Tam Pandhumsoporn "Etching technology and applications for through-the-wafer silicon etching", Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); https://doi.org/10.1117/12.221296

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