19 September 1995 Novel low-stress SiO2-xFx film deposited by room-temperture liquid-phase deposition method
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Proceedings Volume 2639, Micromachining and Microfabrication Process Technology; (1995) https://doi.org/10.1117/12.221287
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States
Abstract
To develop a low-stress thin film for micromachined devices, a novel liquid-phase deposition (LPD) SiO2 - xFx technique utilizing silica-saturated H2SiF6 solution with H2O addition only is proposed. Due to extremely low-temperature processing and fluorine incorporation, the stress of the LPD SiO2 - xFx film can be less than 100 MPa. In this paper, we found that the deposition parameter of H2O addition has much efect on the stress of as-deposited LPD oxide. The stress variations with thermal cycling has also been clarified. We found that the LPD SiO2 - xFx film will be a good candidate as low-stress film for micromachined devices.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching-Fa Yeh, Shyue-Shyh Lin, "Novel low-stress SiO2-xFx film deposited by room-temperture liquid-phase deposition method", Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); doi: 10.1117/12.221287; https://doi.org/10.1117/12.221287
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