26 September 1995 Low-temperature process for very high aspect ratio silicon microstructures using SOG etch mask
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Proceedings Volume 2640, Microlithography and Metrology in Micromachining; (1995) https://doi.org/10.1117/12.222646
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States
Abstract
We present a low temperature single mask process for the fabrication of submicron very high aspect ratio silicon microstructures using a novel SOG (Spin On Glass) scheme for the RIE etch mask. SOG for the planarization of trenches in VLSI processing is extended to produce high aspect ratio oxide etch mask for the dry RIE etching of single crystal silicon. This work extends the height of silicon microstructures from what is currently achievable (10 - 20 microns) to over 50 microns, creating ultra high aspect ratio (greater than 50:1) structures.
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X. Trent Huang, Liang-Yuh Chen, Noel C. MacDonald, "Low-temperature process for very high aspect ratio silicon microstructures using SOG etch mask", Proc. SPIE 2640, Microlithography and Metrology in Micromachining, (26 September 1995); doi: 10.1117/12.222646; https://doi.org/10.1117/12.222646
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