26 September 1995 X-ray microlithography exposure system for high aspect ratio micromachining
Author Affiliations +
Proceedings Volume 2640, Microlithography and Metrology in Micromachining; (1995) https://doi.org/10.1117/12.222654
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States
Abstract
A new x-ray micro-lithography exposure system has been designed and built at CAMD to meet specific demands of synchrotron radiation assisted high aspect ratio micromachining. The system consists of a broad-band transmission (1.2 angstroms to 6.5 angstroms) beamline and a multi-chamber X-ray Exposure Station. The beam line accepts radiation emitted in a bending magnet of the CAMD 1.3 - 1.5 GeV synchrotron storage ring. The beam line is approximately 10 m long and terminates with 125 micrometers thick Be window which defines an X-ray beam of 50 X 10 mm2 at the exposure plane. The beam line is configured to provide 1.0 W/cm2 at 1.5 GeV and 100 mA storage ring operation. The Exposure Station is designed to control different exposure conditions and can handle a variety of mask/sample assemblies. The first camber of the exposure tool is designated as a radiation filter, it controls x-ray spectra using foils and inert gases, and optimizes dose delivered to a sample with a thick resist (in excess of 1 mm). The second chamber is equipped with a multi-axes scanning mechanism to provide designed orientation and exposure of the mask/sample assembly. The two chamber can be separated by a thin foil to facilitate the use of reactive atmospheres for radiation induced chemical processes during exposure. An expansion of the Exposure Station providing large area exposures (up to 300 X 300 mm2) is described.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuli Vladimirsky, Yuli Vladimirsky, Kevin J. Morris, Kevin J. Morris, J. Michael Klopf, J. Michael Klopf, Olga Vladimirsky, Olga Vladimirsky, Volker Saile, Volker Saile, } "X-ray microlithography exposure system for high aspect ratio micromachining", Proc. SPIE 2640, Microlithography and Metrology in Micromachining, (26 September 1995); doi: 10.1117/12.222654; https://doi.org/10.1117/12.222654
PROCEEDINGS
9 PAGES


SHARE
RELATED CONTENT

Micromachining using Helios
Proceedings of SPIE (May 18 1995)
Synchrotron beamlines for x-ray lithography
Proceedings of SPIE (January 31 1994)
X Ray Lithography On Beam Line III IV (3°) At...
Proceedings of SPIE (November 06 1983)

Back to Top