13 September 1995 Fabrication and characterization of gated Si field emitter arrays with gate aperture below 0.5 μm
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Abstract
High aspect-ratio single-crystal microtips have been fabricated using the semi-anisotropic dry etching technique. After the further oxidation sharpening process, arrays of 50 X 50 uniform sharp emitter tips has been achieved. The 200 angstrom-thick Cr metal was also coated on the surface of Si microtips to improve the performance. Furthermore, a modified self-aligned process of the gated field emitter arrays has been successfully developed to reduce the fabrication complexity. Employing this method, the tip radius of Si microemitter is about 200 angstrom, and the gate aperture can be easily reduced to about 0.3 micrometers . It will largely decrease the turn-on voltage of the field emission devices.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tze-Kun Ku, B. B. Hsieh, Maw S. Chen, Chi-Chang Wang, P. W. Wang, Iing-Jar Hsieh, Huang-Chung Cheng, "Fabrication and characterization of gated Si field emitter arrays with gate aperture below 0.5 μm", Proc. SPIE 2641, Microelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications, (13 September 1995); doi: 10.1117/12.220935; https://doi.org/10.1117/12.220935
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