13 September 1995 Gas-phase silicon micromachining with xenon difluoride
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Abstract
Xenon difluoride is a gas phase, room temperature, isotropic silicon etchant with extremely high selectivity to many materials commonly used in microelectromechancial systems, including photoresists, aluminum, and silicon dioxide. Using a simple vacuum system, the effects of etch aperture and loading were explored for etches between 10 and 200 micrometers . Etch rates as high as 40 micrometers /minute were observed. Initial characteriation of wafer surface temperature during the etch indicates tens of degrees of self-heating, which is known to cause substantial decrease in etch rate.
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Floy I. Chang, Richard Yeh, Gisela Lin, Patrick B. Chu, Eric G. Hoffman, Ezekiel J. Kruglick, Kristofer S. J. Pister, Michael H. Hecht, "Gas-phase silicon micromachining with xenon difluoride", Proc. SPIE 2641, Microelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications, (13 September 1995); doi: 10.1117/12.220933; https://doi.org/10.1117/12.220933
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