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13 September 1995 Gas-phase silicon micromachining with xenon difluoride
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Xenon difluoride is a gas phase, room temperature, isotropic silicon etchant with extremely high selectivity to many materials commonly used in microelectromechancial systems, including photoresists, aluminum, and silicon dioxide. Using a simple vacuum system, the effects of etch aperture and loading were explored for etches between 10 and 200 micrometers . Etch rates as high as 40 micrometers /minute were observed. Initial characteriation of wafer surface temperature during the etch indicates tens of degrees of self-heating, which is known to cause substantial decrease in etch rate.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Floy I. Chang, Richard Yeh, Gisela Lin, Patrick B. Chu, Eric G. Hoffman, Ezekiel J. Kruglick, Kristofer S. J. Pister, and Michael H. Hecht "Gas-phase silicon micromachining with xenon difluoride", Proc. SPIE 2641, Microelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications, (13 September 1995);

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