4 October 1995 Investigation of acoustoelectronic gain in piezosemiconductor by method of light diffraction
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Proceedings Volume 2643, Acousto-Optics and Applications II; (1995); doi: 10.1117/12.222735
Event: Acousto-Optics and Applications VI, 1995, Gdansk-Jurata, Poland
Abstract
The experimental results of research of the acousto-electronic interaction are in essence different from prediction of the theory. Instead of the laminarity amplified of the seen noise is formed the moving domain with abnormal properties: its intensity increases superexponentially in the range of 2nd order in nonlinear region, and frequency of maximum of spectrum is smoothly displaced into the region of subharmonic as far as advancement along the sample. It testifies to the absence of essential mechanism from the theory. The experiments have shown, that this mechanism is connected with three-dimensionality of the process of interaction. The critical cross-section of the interaction volume is the radius of coherency of the noise flux. It is shown that amplification of the injected signal with large gain, with dynamic range not less than 50 dB, is possible in the thin channel.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wladimir Rysakov, "Investigation of acoustoelectronic gain in piezosemiconductor by method of light diffraction", Proc. SPIE 2643, Acousto-Optics and Applications II, (4 October 1995); doi: 10.1117/12.222735; http://dx.doi.org/10.1117/12.222735
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KEYWORDS
Diffraction

Electrons

Acoustics

Crystals

Laser beam diagnostics

Interference (communication)

Ions

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