4 October 1995 New developments of resonant acousto-optics in semiconductors
Author Affiliations +
Proceedings Volume 2643, Acousto-Optics and Applications II; (1995) https://doi.org/10.1117/12.222752
Event: Acousto-Optics and Applications VI, 1995, Gdansk-Jurata, Poland
Abstract
Optical, acoustical, and near-resonance acousto-optical properties of GaAs and InP are investigated and several high performance devices are achieved using these crystals. It is shown that this study can be extended to other direct-gap semiconductors of III-V and II-VI elements to match the optical sources in a large range of available light wavelengths.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jacques Sapriel, P. Renosi, P. Le Berre, "New developments of resonant acousto-optics in semiconductors", Proc. SPIE 2643, Acousto-Optics and Applications II, (4 October 1995); doi: 10.1117/12.222752; https://doi.org/10.1117/12.222752
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT

3 GHz bandwidth rutile Bragg cell
Proceedings of SPIE (September 27 2008)
Ghz Gaas Acousto-Optic Modulator Devices
Proceedings of SPIE (September 24 1987)
Material Tradeoff for Wideband Bragg Cells
Proceedings of SPIE (March 04 1986)
Acousto-optic switch for telecommunication networks
Proceedings of SPIE (March 03 2005)
A Single Element 2 D Acousto Optic GaP Laser Beam...
Proceedings of SPIE (June 02 1988)

Back to Top