3 November 1995 Diagnostics of glassy semiconductors by nonlinear absorptive methods
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226177
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
The dependencies of linear losses coefficient (alpha) , two-photon absorption constant (beta) , optical damage threshold Ip and pseudogap width E0 on structure and concentration changes of glasses from the glass-forming region of Ge-As-S system along the As-GeS2, As-Ge2S3, As2S3-GeS2 and As2S3-Ge2S3 sections have been experimentally studied. The critical values of concentration and average coordination number at which the (alpha) , (beta) , and Ip reach their extremes were determined. These results have been discussed in terms of phase and structure-topological transitions.
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Ishtvan V. Fekeshgazi, Ishtvan V. Fekeshgazi, Konstantin V. May, Konstantin V. May, Vladymyr M. Mitsa, Vladymyr M. Mitsa, V. V. Roman, V. V. Roman, } "Diagnostics of glassy semiconductors by nonlinear absorptive methods", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226177; https://doi.org/10.1117/12.226177
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