3 November 1995 Far-infrared spectroscopy of polar semiconductor superlattices (GaAs-GaPxAs1-x)
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226155
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
The features of the infrared reflection spectroscopy are considered for long-period semiconductor superlattices. Taking the GaAs/GaPxAs1-x superlattice system as an example, the applicability of the bulk model is related to light penetration/localization depths. We propose to use relative measurements (i.e. to study RpRs spectra) for raising the accuracy of determination of superlattice parameters by solving the inverse problem.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikolas L. Dmitruk, Nikolas L. Dmitruk, Anatoliy V. Goncharenko, Anatoliy V. Goncharenko, Oleg S. Gorea, Oleg S. Gorea, Volodymyr R. Romaniuk, Volodymyr R. Romaniuk, Olga M. Tatarinscaia, Olga M. Tatarinscaia, Evgenie F. Venger, Evgenie F. Venger, } "Far-infrared spectroscopy of polar semiconductor superlattices (GaAs-GaPxAs1-x)", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226155; https://doi.org/10.1117/12.226155
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