3 November 1995 Influence of different diode parameters on the accuracy of facet temperature measurements by means of Raman microspectroscopy
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226212
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
The facet heating of GaAlAs/GaAs DQW high power laser diodes is one of the main processes for fast degradation and catastrophical optical damage in the near of the laser mirrors. This local heating is caused by nonradiative recombination of the injected carriers and by optical absorption near the cleaved or coated facets. The Stokes and anti-Stokes lines have been measured by excitation with an Ar+ ion laser by high local resolution of about approximately 1 micrometer and an accuracy of the beam position of approximately 0.5 micrometer. The facet temperature is calculated from the ratio of Stokes and anti-Stokes intensity. Lateral and transversal temperatures distribution at the facet of multistripe arrays and the temperature as a function of injection current have been studied. The influence of different mechanisms on the accuracy of the obtained temperatures is discussed.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. J. Semjonov, A. J. Semjonov, } "Influence of different diode parameters on the accuracy of facet temperature measurements by means of Raman microspectroscopy", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226212; https://doi.org/10.1117/12.226212
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