3 November 1995 Laser complex for investigation of semiconductor nonlinear constants
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226237
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
The laser complex for the investigations of nonlinear properties of semiconductors has been designed. The results of the two-photon absorption coefficient of the chalcohenide glass As2S3 measurements are presented. The measurements accuracy and threshold sensitivity of the complex are estimated.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vitaly V. Grabovski, Vitaly V. Grabovski, Ishtvan V. Fekeshgazi, Ishtvan V. Fekeshgazi, Konstantin V. May, Konstantin V. May, Valentin I. Prokhorenko, Valentin I. Prokhorenko, Dmytro Y. Yatskiv, Dmytro Y. Yatskiv, } "Laser complex for investigation of semiconductor nonlinear constants", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226237; https://doi.org/10.1117/12.226237
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