Nondestructive characterization of porous silicon structures by transient grating technique

Kestutis Jarasiunas; Markas Sudzius; Liudvikas Subacius; I. Simkiene; Vygantas Mizeikis

doi:10.1117/12.226171

3 November 1995 Nondestructive characterization of porous silicon structures by transient grating technique

Kestutis Jarasiunas, Markas Sudzius, Liudvikas Subacius, I. Simkiene, Vygantas Mizeikis

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226171
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

We demonstrate for the first time the applicability of transient grating technique to study carrier dynamics in porous silicon and to characterize the sublayers with the different structure in an optical way. The parameters of deeper layers of 130 mm thick porous Si structure have been found similar to those in crystalline substrate. The free standing films at high injection levels indicated very fast nonequilibrium carrier recombination with t equals 430 ps, while the carrier lifetime in its crystalline substrate was above 2 ns.

Citation Download Citation

Kestutis Jarasiunas, Markas Sudzius, Liudvikas Subacius, I. Simkiene, and Vygantas Mizeikis "Nondestructive characterization of porous silicon structures by transient grating technique", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226171

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