3 November 1995 Nondestructive characterization of porous silicon structures by transient grating technique
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226171
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
We demonstrate for the first time the applicability of transient grating technique to study carrier dynamics in porous silicon and to characterize the sublayers with the different structure in an optical way. The parameters of deeper layers of 130 mm thick porous Si structure have been found similar to those in crystalline substrate. The free standing films at high injection levels indicated very fast nonequilibrium carrier recombination with t equals 430 ps, while the carrier lifetime in its crystalline substrate was above 2 ns.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kestutis Jarasiunas, Kestutis Jarasiunas, Markas Sudzius, Markas Sudzius, Liudvikas Subacius, Liudvikas Subacius, I. Simkiene, I. Simkiene, Vygantas Mizeikis, Vygantas Mizeikis, } "Nondestructive characterization of porous silicon structures by transient grating technique", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226171; https://doi.org/10.1117/12.226171
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