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3 November 1995 Optical constants of semiconductors above the fundamental edge
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226152
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
The law of the light refraction and analogues of Fresnel's formulas, obtained from the Maxwell boundary conditions, were used to account for the optical parameters of semiconductors. The calculations, based on our formulas and experimental data on reflectivity at normal incident light of Ge, Si, GaAs, CdS in the region of band-to-band transitions are given. The difficulties which took place earlier in optics of highly absorbing media, disappear in our approach: (1) the angle of refraction is a real value; (2) a real part of dielectric function (epsilon) 1 greater than or equal to 0, because (chi) is less than or equal to n; (3) the index of refraction n is greater than 1.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tamara A. Kudykina "Optical constants of semiconductors above the fundamental edge", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226152
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