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3 November 1995 Optical nonlinearities in GaAs at EL2 quenching by short laser pulses
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226172
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
The possibility to combine photorefractive effect and metastability of defect states in GaAs crystals is combined. Peculiarities of free carrier and photorefractive nonlinearities at conditions of deep donor EL2 optical quenching by short laser pulse are analyzed theoretically and experimentally. The enhancement of low temperature photorefractive effect was observed at T less than or equal to 250 K in a good agreement with theoretical simulation and attributed to the temporary EL2 quenching by nanosecond pulses.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Markas Sudzius, L. Bastiene, and Kestutis Jarasiunas "Optical nonlinearities in GaAs at EL2 quenching by short laser pulses", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226172
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