3 November 1995 Optical phonons in layer PbI2 crystals with stacking faults
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226218
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
In this paper we present Raman results obtained for PbI2 crystals in the presence of stacking faults for which the effect of confinement of the optical branches is closely seen. We also report the observation of interface phonons by Raman scattering from stacking faults region.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. A. Davydova, N. A. Davydova, V. A. Bibik, V. A. Bibik, } "Optical phonons in layer PbI2 crystals with stacking faults", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226218; https://doi.org/10.1117/12.226218
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