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3 November 1995 Pecularities of recombination processes in injection lasers based on (In,Ga)As quantum dots leading to the single longitudinal mode operation at room temperature
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226182
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
The characteristics of injection laser with recombination region based on (In,Ga)As quantum dots have been studied. The quality of the structures does not prevent the specific features of quantum dot active region to manifest itself in laser characteristics. The single-mode lasing has been reproducibly achieved in broad area laser diodes. The threshold current densities have been found to be higher than the theoretical values due to non-radiative recombination. The results obtained are promising for applications where a very narrow lasing spectrum is important, i.e., laser arrays, pumping of solid-state lasers, etc.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey V. Zaitsev, Nikita Yu. Gordeev, M. P. Soshnikov, Alexander V. Lunev, Alexey Y. Egorov, Alexey E. Zhukov, Victor M. Ustinov, Nikolai N. Ledentsov, and Petr S. Kop'ev "Pecularities of recombination processes in injection lasers based on (In,Ga)As quantum dots leading to the single longitudinal mode operation at room temperature", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226182
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