3 November 1995 Photoluminescence and x-ray studies of thin layers down to single quantum wells
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226189
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
We have demonstrated the capability and limitation of nondestructive photoluminescence and x-ray diffraction techniques in the characterization of GaAs, AlGaAs, InGaAs matched epitaxial layers grown by molecular beam epitaxy as well as quantum wells grown by metalorganic chemical vapor deposition. The application of the x ray diffraction and the photoluminescence methods to the same objects made it possible to control Al content in the AlxGa1-xAs layers in the range of x (0 less than or equal to x less than or equal to 1) and to solve some technological questions connected with layers lateral homogeneity.
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Alexey V. Svitelskiy, Alexey V. Svitelskiy, Galina N. Semenova, Galina N. Semenova, Vasily P. Klad'ko, Vasily P. Klad'ko, Tatyana Georgiyevn Kryshtab, Tatyana Georgiyevn Kryshtab, } "Photoluminescence and x-ray studies of thin layers down to single quantum wells", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226189; https://doi.org/10.1117/12.226189
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