3 November 1995 Structural morphology features and photoluminescence spectroscopy of IR-photosensitive HgCdTe/CdTe
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226186
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
Mechanisms of macrodefect's and isovalent admixture's influence on photoluminescence spectra and halvanomagnetic parameters of HgCdTe/CdTe heterostructures were investigated. Profiles of electrical and structural parameter distributions through the depth of epilayers HgCdTe (x approximately equal to 0.2, p-type and with mixed conductivity), on CdTe substrates ('clean' and with 4% of Se or Zn components) were measured. There was detected substantial increase of well-known in CdTe donor-acceptor photoluminescence band 1.43 eV (T equals 77 K) in transition layers and CdTe substrates with increased macrodefect concentration (dislocations, subgrain boundaries, Te precipitates). It was established that such elevation was dealing with the donor component of conductivity in substrates and corresponding epilayers. The donor's nature was dealing with the substrate's defect structure. So photoluminescence band intensity may characterize CdTe defect level and permit us to reject such substrates.
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Lyudmila A. Karachevtseva, Lyudmila A. Karachevtseva, Alexei V. Lyubchenko, Alexei V. Lyubchenko, Nina Khilimova, Nina Khilimova, "Structural morphology features and photoluminescence spectroscopy of IR-photosensitive HgCdTe/CdTe", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226186; https://doi.org/10.1117/12.226186
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