3 November 1995 Surface polaritons in semiconductor films with depletion regions
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226149
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
A theory of TM type surface polaritons in semiconductor films possessing depletion transition layer, in which electron concentration changes according to the law of hyperbolic cosine, was built. The influence of dissipative as well as non-dissipative damping, caused by plasma resonance in transition layer, on dispersion properties of normal and tangential modes of surface polaritons was determined. It was shown that in the absence of dissipative damping two dispersion branches both for normal and tangential modes of surface polaritons exist, parted by a frequency gap. Taking into consideration dissipative damping leads to vanishing of the gap and existence of only one dispersion branch both for normal and tangential modes of surface polaritons. The damping of tangential mode therewith exceeds considerably the damping of normal mode.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikolai N. Beletskii, Nikolai N. Beletskii, Elena A. Gasan, Elena A. Gasan, } "Surface polaritons in semiconductor films with depletion regions", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226149; https://doi.org/10.1117/12.226149
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