3 November 1995 Theory of optical nondestructive testing of the surface quality of semiconductor wafers on kinetics of recombination heating
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226129
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
The problem of heating of semiconductor surface and its subsurface layers in the case of pulse laser irradiation is theoretically considered. It is supposed that heating is due to surface recombination of nonequilibrium carriers. The time dependencies of temperature for different values of a surface recombination are given. The obtained heating dependencies can be used for analysis of a surface quality.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. N. Grigor'ev, N. N. Grigor'ev, Tamara A. Kudykina, Tamara A. Kudykina, } "Theory of optical nondestructive testing of the surface quality of semiconductor wafers on kinetics of recombination heating", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226129; https://doi.org/10.1117/12.226129
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