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3 November 1995 Thermostimulate optimization of CdHgTe IR-photodetector parameters
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226137
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
For technological optimization of CdHgTe crystals used widely in IR-photodetectors the mechanisms of principal (theoretical) limitation of carrier concentration, mobility, and lifetime were investigated in the result of thermo and ultrasonic treatments. Next new phenomena and peculiarities of non-equilibrium processes were determined. Experimentally and theoretically minimum of lifetime concentration dependence was obtained when equilibrium carrier concentration was variated due to modification of acceptor (mercury vacancies) concentration. For 'weak' p-type conductivity crystals in low for holes magnetic fields the simple analytical Hall coefficient magnetofield dependence was justified. That permitted us to control electron and hole concentrations and mobilities for practically intrinsic material. Recombination-sized effect dealt with dependence of characteristic diffusion length on macrodefect size and configuration was obtained. Thermoacoustic processes of mercury vacancy generation and 'cure' were investigated.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lyudmila A. Karachevtseva and Alexei V. Lyubchenko "Thermostimulate optimization of CdHgTe IR-photodetector parameters", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226137
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