3 November 1995 Ultra-short-pulse nature of superradiation in injection emitters
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226188
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
Some characteristic features of the formation of ultrashort lasing pulses in InGaAsP/InP lasers led to the idea of the existence of short peaks of coherent radiation below lasing threshold. A sensitive autocorrelator set up based on two-photon absorption was optimized to study superradiation in semiconductor materials. Sensitivity threshold as low as 50 mkW was achieved for radiation with 1.3 mkm wavelength. Autocorrelation functions of superradiation for InGaAsP/InP cw laser at 0.8, 1.0, and 1.9 of threshold current were obtained and prove an existence of some ultrashort pulses below the lasing threshold. These pulses exist even at superluminescent regime, which occurs at a pumping current density of 1700 A/cm2. It corresponds to about 500,000 carriers in the cube with dimensions equal to the wavelength of emitted radiation (1.28 mkm in semiconductor material). This effect may be caused by collective irradiation phenomena similar to known Dicke superradiation in solid state lasers.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey V. Zaitsev, Sergey V. Zaitsev, Anatoly M. Georgievski, Anatoly M. Georgievski, } "Ultra-short-pulse nature of superradiation in injection emitters", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226188; https://doi.org/10.1117/12.226188
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