3 November 1995 Use of surface excitations in semiconductor materials for modulation of IR radiation
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226208
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
We have studied the processes of modulation of infrared radiation when surface plasmon- polaritons and guided wave plasmon-polaritons are generated by the attenuated total reflectance at surfaces and in thin films of semiconductors. For these processes a comparison analysis of their characteristics was made when charge carrier concentration changed due to interaction of modulated radiation with the sample surface and bulk. It is shown how these characteristics are modified due to surface interaction.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Evgenie F. Venger, Evgenie F. Venger, I. I. Burshta, I. I. Burshta, A. V. Melnichuk, A. V. Melnichuk, L. Y. Melnichuk, L. Y. Melnichuk, Y. A. Pasechnik, Y. A. Pasechnik, } "Use of surface excitations in semiconductor materials for modulation of IR radiation", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226208; https://doi.org/10.1117/12.226208
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