25 March 1996 Characterization of a CID-38 charge injection device
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Proceedings Volume 2654, Solid State Sensor Arrays and CCD Cameras; (1996); doi: 10.1117/12.236096
Event: Electronic Imaging: Science and Technology, 1996, San Jose, CA, United States
Abstract
Charge coupled devices have been the dominant solid state detector array in the visible due to their relatively simple design and easy implementation. With recent advances in lithographic techniques, arrays having smaller photosite dimensions and an increased number of pixels have become available. Further advances in large format CCDs have been limited by charge transfer efficiency (CTE) of photoelectrons to the readout amplifier. The increased number of pixel transfers in large arrays can degrade image quality and MTF unless even higher CTEs are achieved. Multiplexer designs that remove the need for thousands of charge transfers can bypass these CTE limitations. One such focal plane architecture is the CID or charge injection device. This paper presents results obtained with one particular CID based system. The array is housed in a dewar capable of liquid nitrogen operation. The output signal from the array is amplified with a nearby low noise preamplifier before digitization. Results on injection efficiency, readout noise, and other pertinent CID parameters, are presented obtained from this device preamplifier as well as specific experiments.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian S. Backer, Zoran Ninkov, Massimiliano Corba, "Characterization of a CID-38 charge injection device", Proc. SPIE 2654, Solid State Sensor Arrays and CCD Cameras, (25 March 1996); doi: 10.1117/12.236096; https://doi.org/10.1117/12.236096
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KEYWORDS
Electrodes

Charge-coupled devices

Electronics

Amplifiers

Field effect transistors

Digital signal processing

Detector arrays

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