25 March 1996 Scientific CMOS CID imagers
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Abstract
A new family of binary format CMOS CID imagers was designed to meet the random pixel addressing and on-chip signal manipulation requirements of may scientific applications. Key features include true random pixel and programmable subarray addressing, non-destructive readout and charge injection (clearing) that eliminate the need to read out superfluous pixels. And, programmable horizontal/vertical binning provides improved signal/noise and permits spatial signal consolidation even when reading out overlapping subarrays. The imagers incorporate on-chip preamplifiers for low noise readout. Inherent CID pixel characteristics such as non-destructive, non-blooming read-out that permit adaptive exposure control and linear dynamic range extension are maintained. Formats include 10242, 5122, and 1024 X 256. All incorporate 27.0 micron contiguous square pixels with in excess of 106 electron well capacity. Serial horizontal and vertical input ports are provided to accept the coordinates of the pixel or subarray to be readout. Rapid subarray readout is facilitated via a single pixel advance clock that is used in conjunction with each random access decoder. A description of the architecture, imager operation and application will be presented.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeffrey J. Zarnowski, Jeffrey J. Zarnowski, Joseph Carbone, Joseph Carbone, Matthew A. Pace, Matthew A. Pace, } "Scientific CMOS CID imagers", Proc. SPIE 2654, Solid State Sensor Arrays and CCD Cameras, (25 March 1996); doi: 10.1117/12.236116; https://doi.org/10.1117/12.236116
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