Design And Characterization Of A Schottky Infrared Charge-Coupled Device (IRCCD) Focal Plane Array

B. R. Capone; R. W. Taylor; W. F. Kosonocky

doi:10.1117/12.959910

20 July 1981 Design And Characterization Of A Schottky Infrared Charge-Coupled Device (IRCCD) Focal Plane Array

B. R. Capone, R. W. Taylor, W. F. Kosonocky

Proceedings Volume 0267, Staring Infrared Focal Plane Technology; (1981) https://doi.org/10.1117/12.959910
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

We describe the physics, construction, operational properties, and performance of Schottky mosaic sensors utilizing platinum silicide as the sensing layer. These devices are monolithic and are fabricated with standard integrated circuit grade silicon. Data are presented on quantum yield, transfer characteristic, uniformity, and integration element size. The construction and performance of a second generation, 32x64 element, area array is discussed. Several examples of thermal imaging are shown.

Citation Download Citation

B. R. Capone, R. W. Taylor, and W. F. Kosonocky "Design And Characterization Of A Schottky Infrared Charge-Coupled Device (IRCCD) Focal Plane Array", Proc. SPIE 0267, Staring Infrared Focal Plane Technology, (20 July 1981); https://doi.org/10.1117/12.959910

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