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12 April 1996 Carrier distributions and leakage in (AlGa)InP visible emitting lasers
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We have examined the distribution of carriers between well and barrier in 670 nm GaInP lasers by recording spontaneous emission spectra at threshold as a function of temperature through a top contact window. Assuming the bands in the active region of wells and barrier to be flat at threshold we find that these carrier populations are well described by common quasi- Fermi levels and a carrier temperature equal to the lattice temperature. The activation energy of the thermally activated leakage current at threshold agrees well with that predicted on a flat- band model for the loss of electrons through the X conduction band minima. A self-consistent simulation of the carrier distribution through the complete laser structure at threshold shows that a flat-band model is a reasonable approximation over the range of temperatures (200 K - 400 K) and for the structures considered in this work.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Blood, Peter M. Smowton, and Damian Foulger "Carrier distributions and leakage in (AlGa)InP visible emitting lasers", Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996);

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