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12 April 1996 High-power separate-confinement heterostructure AlGaAs/GaAs laser diodes with broadened waveguide
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Abstract
AlGaAs/GaAs graded-index separate-confinement heterostructure single quantum well (GRINSCH-SQW) lasers with different waveguide thickness have been analyzed experimentally and compared with results from modeling using transverse optical field distributions. We have found that for GRINSCH lasers the halfwidth of near-field and far-field patterns depends very weakly on the waveguide thickness due to the focusing of the optical field in the transverse direction by the graded-index waveguide. At the same time, the mode intensity in the cladding layers is reduced by two orders of magnitude as the waveguide thickness is increased from 40 nm to 1200 nm. As a result, a 20% improvement in the differential quantum efficiency ((eta) d) is realized, while the threshold current density remains unchanged. Differential quantum efficiency as high as 78% and output power exceeding 4 W cw have been obtained for broadened waveguide lasers.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitri Z. Garbuzov, Joseph H. Abeles, Nancy A. Morris, Peter D. Gardner, Alfred R. Triano, Maria G. Harvey, Dean B. Gilbert, and John C. Connolly "High-power separate-confinement heterostructure AlGaAs/GaAs laser diodes with broadened waveguide", Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996); https://doi.org/10.1117/12.237659
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