12 April 1996 Highly reliable 685-nm 50-mW visible lasers with Zn-diffused windows
Author Affiliations +
Abstract
High-power, highly reliable 685 nm Zn-diffused type window structure laser diodes (LDs) are developed using 3-inch (phi) wafers. The lasers have exhibited over 7000 hours operation under the condition of 60 degrees Celsius, 50 mW. In addition, over 4000 hours operation under the condition of 60 degrees Celsius, 60 mW is also achieved. These LDs are fabricated by well controlled 3-inch full wafer processing. The window regions near both facets consist of the disordered GaInP wells formed by an open-tube solid-phase Zn-diffusion technique. It is confirmed that highly uniform characteristics are achieved over the 3-inch wafer. Moreover, low astigmatic distances of less than 3 micrometer m are obtained in the range of 3 - 50 mW in spite of the window structure.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hitoshi Tada, Hitoshi Tada, Ken Harada, Ken Harada, Akihiro Shima, Akihiro Shima, Shin'ichi Yamamura, Shin'ichi Yamamura, Munehiro Kato, Munehiro Kato, T. Motoda, T. Motoda, Y. Nagai, Y. Nagai, Kouki Nagahama, Kouki Nagahama, Mutuyuki Otsubo, Mutuyuki Otsubo, Masao Aiga, Masao Aiga, } "Highly reliable 685-nm 50-mW visible lasers with Zn-diffused windows", Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996); doi: 10.1117/12.237647; https://doi.org/10.1117/12.237647
PROCEEDINGS
9 PAGES


SHARE
Back to Top