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12 April 1996 InAsSb/InAlAsSb quantum-well diode lasers emitting beyond 3 um
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The current status of InAsSb/InAlAsSb quantum-well (QW) lasers emitting between 3 and 4 micrometer is described. QW lasers grown on GaSb substrates, with emission wavelengths at approximately 3.9 micrometer, have operated pulsed up to 165 K. At 80 K, cw power of 30 mW/facet has been obtained. Ridge-waveguide lasers have operated cw up to 128 K. QW lasers grown on InAs have emission wavelengths between 3.2 and 3.55 micrometer. Broad- stripe lasers have operated pulsed up to 225 K and ridge-waveguide lasers have operated cw to 175 K. Theoretical analysis of the laser gain using a 6 by 6 k (DOT) p model to calculate the valence subband structure is reported.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hong K. Choi, George W. Turner, M. J. Manfra, M. K. Connors, Frederick P. Herrmann, Arvind Baliga, and Neal G. Anderson "InAsSb/InAlAsSb quantum-well diode lasers emitting beyond 3 um", Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996);

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