12 April 1996 Mechanisms of optical confinement in semiconductor laser diodes and laser arrays
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Abstract
The nature of optical confinement in the laser diodes (LDs) and phase-locked laser arrays (PLLAs) with a multiple mesa-stripe structure is studied. Two specific mechanisms of optical confinement in the direction parallel to the p-n junction plain are distinguished -- (1) variation of the waveguide effective refractive index due to the mesa-stripe formation, and (2) refractive index modulation induced by heating of the heterostructure. Stable operation of the LD is achieved when either weak or strong optical coupling between the neighboring stripes is realized. A phase-locked emission is obtained only for the LDs with the strong optical coupling which is related to the heating of heterostructure. Temperature effects are found to influence the optical confinement in the direction perpendicular to p-n junction plain in the case of LDs with an 'extended' waveguide. This effect hinders the narrowing of the far field distribution of such LDs.
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Viktor P. Chaly, Dimitry M. Demidov, Sergey Yu. Karpov, Alexander L. Ter-Martirosyan, and D. V. Titov "Mechanisms of optical confinement in semiconductor laser diodes and laser arrays", Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996); doi: 10.1117/12.237641; https://doi.org/10.1117/12.237641
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