12 April 1996 Optically pumped mid-IR type-II quantum well lasers
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Abstract
Pulsed, optically pumped four-constituent Type-II (InAs-Ga1-xInxSb-InAs- AlSb) quantum well lasers emitting at 3.9 - 4.1 micrometer were observed to lase up to 285 K with a characteristic temperature T0 of 35 K for 170 K less than Top less than 270 K. A theoretical analysis predicts dramatic improvements once the potential for suppressing Auger recombination is fully realized.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jay I. Malin, Jay I. Malin, Jerry R. Meyer, Jerry R. Meyer, Christopher L. Felix, Christopher L. Felix, James R. Lindle, James R. Lindle, Lew Goldberg, Lew Goldberg, Craig A. Hoffman, Craig A. Hoffman, Filbert J. Bartoli, Filbert J. Bartoli, C.H. Thompson Lin, C.H. Thompson Lin, Paul Chang, Paul Chang, Stefan J. Murry, Stefan J. Murry, Rui Q. Yang, Rui Q. Yang, Shin Shem Pei, Shin Shem Pei, "Optically pumped mid-IR type-II quantum well lasers", Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996); doi: 10.1117/12.237671; https://doi.org/10.1117/12.237671
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