12 April 1996 Time-dependent modeling of the MFA-MOPA
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Proceedings Volume 2682, Laser Diodes and Applications II; (1996); doi: 10.1117/12.237667
Event: Photonics West '96, 1996, San Jose, CA, United States
Abstract
Semiconductor lasers present enormous potential for free-space laser communications. Recently, a new class of devices based on a master oscillator power amplifier configuration has emerged as the leading contender. The paper illustrates the monolithically integrated flared amplifier (MFA-MOPA) device. It incorporates an index-guided, single-lateral-mode- distributed Bragg reflector (DBR) master oscillator section that diffracts a relatively low- power, narrow spectral bandwidth signal into a tapered amplifier section. The tapered amplifier section then amplifies the output to a one-watt or greater level while the divergence precludes the formation of filaments, maintaining good beam quality during the amplification process. The final output facet of the amplifier section is anti-reflection coated so that feedback into the DBR master oscillator is minimized, while outcoupling the amplified power.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory C. Dente, Michael L. Tilton, David J. Bossert, Malcolm W. Wright, "Time-dependent modeling of the MFA-MOPA", Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996); doi: 10.1117/12.237667; https://doi.org/10.1117/12.237667
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KEYWORDS
Oscillators

Amplifiers

Molybdenum

Semiconductor lasers

Reflectivity

Instrument modeling

Optical amplifiers

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